The company is creating the new GaN on GaN LED facility in partnership with the State of New York, and expects to employ hundreds of workers. The Buffalo facility should be operational by 2015.
GaN on GaN technology is a new method of LED fabrication, created by the inventor of the blue LED Shuji Nakamura. He referred to this technology as ‘LED 2.0’ at LuxLive last week.
‘We chose Buffalo as the best location for our new fabrication facility based on several factors, including the innovative high-tech vision of Governor Cuomo; the ability to attract some of the best and brightest scientists and engineers in the world; and the capacity to tightly control the product quality and intellectual property around our LEDs through our partnership with the SUNY College of Nanoscale Science and Engineering,’ said Dr Tom Caulfield, president and COO of Soraa.
The move is part of New York’s Buffalo Billion initiative, which is creating hundreds of jobs in technology.
Governor Cuomo said: ‘Under the largest investment in our Buffalo Billion initiative, we are building a state-of-the-art campus to house high-tech and advanced manufacturing companies that will create hundreds of jobs and leverage over a billion dollars in private investment for Western New York.’ On welcoming Soraa to Buffalo, he added: ‘This project marks a giant step forward in our Buffalo Billion strategy, transforming a once vacant property into a development-ready site that will create good-paying permanent jobs, make Buffalo an international hub for innovation and attract more businesses from around the world.’
- More on new technology from Lux Review:
- GaN-on-GaN technology is ‘LED 2.0’ says blue LED inventor
- Could LED carpets be the future?
- LED module hits 203lm/W